SFH4259S

The SFH4259S from Osram is a high power infrared emitter (850nm) (SMT power TOPLED with lens). High forward current is allowed at high temperature. The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, stress test qualification for automotive grade discrete semiconductors. It has 15ns rise and fall time of Ie (10% and 90% of Ie max) (IF = 100mA, RL = 50 ohm), 3.1V (<= 3.6V) forward voltage (IF = 100mA, tp = 20ms), 4V (<= 5.2V) forward voltage (IF = 700mA, tp = 100µs). The total radiant flux (IF=100mA, tp=20ms) is 115mW, temperature coefficient of Ie or Φe (IF = 100mA, tp = 20ms) is -0.5%/K, temperature coefficient of VF (IF = 100mA, tp = 20ms) is -2mV/K, temperature coefficient of wavelength (IF = 100mA, tp = 20ms) is 0.3nm/K. It is suitable for use in 3D capturing, access control / biometrics, CCTV surveillance, gaming, amusement, gambling, gesture recognition, industrial automation, safety systems and CCTV, VMS, white goods.

• 85 (>= 40)mW/sr radiant intensity at IF= 100mA, tp= 20ms, double stack emitter
• 5V reverse voltage, 100mA forward current, 0.7A surge current (tp <= 300 µs, D = 0)
• Power consumption (Ptot) is 245mW
• ESD withstand voltage is 2KV according to ANSI/ ESDA/ JEDEC JS-001 - HBM
• 860nm peak wavelength (IF = 100mA, tp = 20ms)
• 850nm centroid wavelength (IF = 100mA, tp = 20ms)
• 30nm spectral bandwidth at 50% of Imax (IF = 100mA, tp= 20ms)
• ±25° half angle, dimensions of active chip area is 0.3mm x 0.3mm (L x W)
• Operating temperature range from -40°C to 100°C

Предупреждения

Depending on the mode of operation, this device emits highly concentrated non visible infrared light which can be hazardous to the human eye.

Примечания

Продукты с данным устройством должны следовать предосторожностям безопасности в соответствии с IEC 60825-1 и IEC 62471.