CoolSiC™ for next-level energy efficiency
The ideal fit for a wide range of applications
Infineon Technologies – CoolSiC™ products Unmatched reliability, variety, and system benefits. SiC technology from Infineon!
As the leading power supplier with >20 years of heritage in silicon carbide (SiC) technology development Infineon is prepared to cater to the need for smarter, more efficient energy generation, transmission, and consumption. Their experts understand what is needed to reduce system complexity, leading to decreased system cost and size in mid- to high-power systems.
With Infineon’s extensive product portfolio, meeting the highest quality standards, long system lifetime and reliability are guaranteed. Infineon owns the complete supply chain and offers unbiased design-in support for Si, GaN and SiC. Turn to Infineon, the trusted SiC-supplier, and become part of a revolution to rely on – independent of your individual design, as well as system requirements.
More about our silicon carbide portfolio
We continuously add SiC-based products - including the revolutionary CoolSiC™ MOSFETs in trench technology - to the already existing Si-assortment. Today the company offers one of the most comprehensive power portfolios in the industry – ranging from ultra-low to high-voltage power devices. Going even beyond only ensuring the availability of best-fit solutions, we walked the extra mile to optimize the SiC-based product offering to meet specific application requirements. In response to the fact that ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled utilizing isolated gate output sections, our customers are supplied with the perfectly matching galvanically isolated EiceDRIVER™ gate-driver ICs based on our coreless transformer technology. Producing several millions of hybrid modules (a combination of a fast silicon-based switch with a CoolSiC™ Shottky diode) in recent years resulted in a tremendous know-how and capacity build-up and further contributed to our technology leadership.
Empowering the next generation of high-performance systems
Explore how the new CoolSiC™ MOSFET G2 trench MOSFET enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC-DC, DC-DC and DC-AC. Photovoltaic inverters, energy storage systems, EV charging, power supplies, motor drives and more belong to the many cases where SiC MOSFETs provide additional performance, compared to Si alternatives.
Features:
- 400 V / 650 V / 1200 V CoolSiC MOSFET G2
- Lowest available RDS(on)
- Largest product portfolio
- Unique robustness features
Make CoolSiC™ part of your application
CoolSiC™ - Customer success Stories
Cold Split Technology
CoolSiC™ - trench technology - a revolution to rely on
CoolSiC™ - The perfect solution for servo drives
CoolSiC™ MOSFET in servo drive application
Microlearning: CoolSiC™ MOSFET in an EV charging application
Infineon’s CoolSiC™ product categories: Find your best fitting products
Infineon continuously added SiC-based products - including the revolutionary CoolSiC™ MOSFETs in trench technology - to the already existing Si-assortment. Today the company offers one of the most comprehensive power portfolios in the industry – ranging from ultra-low to high-voltage power devices. Going even beyond only ensuring the availability of best-fit solutions, we walked the extra mile to optimize the SiC-based product offering to meet specific application requirements.
CoolSiC™ MOSFETs – DISCRETES
| Part number | Specification | Package | Applications |
|---|---|---|---|
 IMT65R022M1H | CoolSiC™ 650 V, 27 mΩ SiC-based trench MOSFET | PG-HSOF-8 |
|
 IMT65R030M1H | CoolSiC™ MOSFET discrete 650 V in TOLL package | PG-HSOF-8 | |
 IMT65R057M1H | CoolSiC™ MOSFET discrete 650 V in TOLL package | PG-HSOF-8 | |
 AIMBG75R016M1HXTMA1 | The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. | PG-TO263-7 |
|
 AIMDQ75R016M1HXUMA1 | The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. | PG-HDSOP-22 | |
 IMZ120R060M1H | CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package | PG-TO247-4 |
|
 IMBG120R053M2H | CoolSiC™ MOSFET 1200 V G2 in TO-263-7 package | PG-TO-263-7 |
|
 IMYH200R024M1H | CoolSiC™ 2000 V SiC Trench MOSFET | PG-TO-247PLUS-4-HCC |
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 IMW120R030M1H | CoolSiC™ 1200V SiC Trench MOSFET | PG-TO247-3 |
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 IMBF170R1K0M1 | CoolSiC™ 1700 V SiC Trench MOSFET | PG-TO-263-7 |
|
CoolSiC™ MOSFETs - MODULES
| Part number | Specification | Package | Applications |
|---|---|---|---|
 FS55MR12W1M1H_B11 | Sixpack 1200 V CoolSiC™ MOSFET Easy Module | AG-EASY1B |
|
 FS33MR12W1M1H_B11 | CoolSiC™ MOSFET sixpack module 1200 V | AG-EASY1B |
|
 F3L11MR12W2M1HP_B19 | CoolSiC™ MOSFET 3-level module 1200 V | AG-EASY2B |
|
 FF2MR12W3M1H_B11 | Half-bridge 1200 V CoolSiC™ MOSFET Easy Module | AG-EASY3B |
|
 F4-11MR12W2M1HP_B76 | CoolSiC™ MOSFET fourpack module 1200 V | AG-EASY2B |
|
 FF1MR12KM1H | CoolSiC™ MOSFET half bridge module 1200 V | AG-62MMHB |
|
 FF2MR12KM1H | CoolSiC™ MOSFET half bridge module 1200 V | AG-62MMHB | |
 FF6MR12KM1H | Half-bridge 1200 V CoolSiC™ MOSFET Module | AG-62MMHB | |
 FF3MR20KM1H | CoolSiC™ MOSFET half bridge module 2000 V | AG-62MMHB |
|
 FF4MR20KM1H | CoolSiC™ MOSFET half bridge module 2000 V | AG-62MMHB |
EiceDRIVER™ SiC MOSFET Gate Driver ICs
| Part number | Specification | Package | Applications |
|---|---|---|---|
 1ED3321MC12N | 2300 V single-channel isolated gate driver with short-circuit protection, active Miller clamp and soft-off, UL 1577 & VDE 0884-11 certified | PG-DSO-16 |
|
 1ED3142MU12F | 6.5 A, 3 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 13.6 V UVLO | PG-DSO-8 |
|
 1ED3125MU12F | 10 A, 3.0 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 10.5 V UVLO | PG-DSO-8 | |
 2EDS9265H | Fast, robust, dual-channel, reinforced isolated MOSFET gate driver with accurate and stable timing | PG-DSO-16 |
|
 2EDF9275F | Fast, robust, dual-channel, functional isolated MOSFET gate driver with accurate and stable timing | PG-DSO-16 |
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CoolSiC™ MOSFET – DISCRETE
| Part number | Specification | Package | Applications |
|---|---|---|---|
 AIKBE50N65RF5ATMA1 | Automotive Silicon-carbide (SiC) Hybrid Discrete 650 V in D2PAK-7L | PG-TO263-7 |
|
 AIMBG120R040M1XTMA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in D2PAK-7L, 40mΩ | PG-TO263-7 |
|
 AIMBG120R080M1XTMA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in D2PAK-7L, 80mΩ | PG-TO263-7 |
|
 AIMZH120R010M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 8.7mΩ | PG-TO247-4 |
|
 AIMZH120R020M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 20mΩ | PG-TO247-4 | |
 AIMZH120R030M1TXKSA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in TO247-4L (thin leads), 30mΩ | PG-TO247-4 | |
 AIMZH120R040M1TXKSA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in TO247-4L (thin leads), 40mΩ | PG-TO247-4 |
|
 AIMZH120R060M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 60mΩ | PG-TO247-4 | |
 AIMZH120R080M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 80mΩ | PG-TO247-4 | |
 AIMZH120R120M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 120mΩ | PG-TO247-4 |
|
 AIMZH120R160M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 160mΩ | PG-TO247-4 |
|
 FS05MR12A6MA1BBPSA1 | This HybridPACK™ Drive is a very compact six-pack module (1200V/200A) optimized for hybrid and electric vehicles. | AG-HDG1-3211 |
|
 FS03MR12A6MA1BBPSA1 | This HybridPACK™ Drive is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles. | AG-HDG1-3211 |
|
 FF08MR12W1MA1B11ABPSA1 | EasyPACK™ CoolSiC™ Automotive MOSFET 1200V Half Bridge Module | AG-EASY1BA-3211 |
|
| Part number | Description | Target applications | Key features and benefits |
|---|---|---|---|
 Mother board: EVAL_PS_SIC_DP_MAIN | EVAL_PS_SIC_DP_MAIN CoolSiC™ MOSFET 1200 V in TO-247 3-/4-pin evaluation platform (mother board) User Guide | Solutions for solar energy systems, EV charging, UPS, power supplies, motor control and drives | Features:
Benefits:
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 Daughter board: REF_PS_SIC_DP1 | REF_PS_SIC_DP1 Miller clamp function board for EVAL_PS_SIC_DP_MAIN (daughter board / drive card) | ||
 Daughter board: REF_PS_SIC_DP2 | REF_PS_SIC_DP2 Bipolar supply function board for EVAL_PS_SIC_DP_MAIN (daughter board / drive card) | ||
 EVAL-COOLSIC-2KVHCC | Evaluation Board as adaptable double pulse tester for 2000 V discrete CoolSiC™ MOSFETs in TO-247-4-PLUS-HCC package with compact single channel isolated gate driver EiceDRIVER™ 1ED3124MU12H1200 | Industrial | Features:
Benefits:
|
 EVAL_3K3W_TP_PFC_SIC | 3300 W CCM bidirectional totem-pole PFC unit using CoolSiC™ 650 V, 600 V CoolMOS™ C7, and digital control via XMC™ microcontroller | High-end server, datacenter, telecom | Features:
Benefits:
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Infineon’s Podcast4Engineers
SiC: Introduction to silicon carbide with Eva
No longer just an innovation for the next generation of power semiconductors, silicon carbide (SiC) has arrived. Listen as Eva explains how SiC has already transformed many applications like EV charging and photovoltaic and what design engineers should consider when switching to SiC.
SiC: Silicon carbide device technologies with Christian
Who needs diamonds, when you have silicon carbide? In our latest episode, Christian explains what SiC and diamonds have in common and how new device technologies are pushing SiC designs even further
SiC: Silicon carbide discrete packages with Edward and Giuseppe
Great things come in small packages… especially when it’s silicon carbide! In this episode, our experts Edward and Giuseppe talk about the different discrete package options for SiC and what we can expect in the future.
SiC: Silicon carbide module packages with Ainhoa
With great power comes great responsibility – or perhaps just great designs! Listen as our expert Ainhoa talks about how SiC in power modules has evolved over the years and what considerations are important when choosing a module for your power electronics design.
